Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory-Reference-Cited by-同舟云学术

Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

Published:2009-07 Issue:7-9 Volume:86 Page:1807-1811
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Govoreanu B.,Degraeve R.,Zahid M.B.,Nyns L.,Cho M.,Kaczer B.,Jurczak M.,Kittl J.A.,Van Houdt J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Scaling down the interpoly dielectric for next generation Flash memory: Challenges and opportunities

2. J. Van Houdt, in: Proceedings of IRPS, 2005, pp. 234–239.

3. Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future nand Flash Memory

4. G. Molas, M. Bocquet, J. Buckley, J.P. Colonna, L. Masarotto, H. Grampeix, F. Martin, V. Vidal, A. Toffoli, P. Brianceau, L. Vermande, P. Scheiblin, M. Gely, A.M. Papon, G. Auvert, L. Perniola, C. Licitra, T. Veyron, N. Rochat, C. Bongiorno, S. Lombardo, B. De Salvo, S. Deleonibus, in: IEDM Technical Digest, 2007, pp. 453–456.

5. Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory

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