Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices-Reference-Cited by-同舟云学术

Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices

Published:2017-06 Issue: Volume:178 Page:98-103
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Mehonic A.,Munde M.S.,Ng W.H.,Buckwell M.,Montesi L.,Bosman M.,Shluger A.L.,Kenyon A.J.

Funder

EPSRC

A*STAR Institute of Materials Research and Engineering

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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5. Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell

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