Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation-Reference-Cited by-同舟云学术

Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation

Published:2004-04 Issue:1-4 Volume:72 Page:50-54
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Felix J.A,Xiong H.D,Fleetwood D.M,Gusev E.P,Schrimpf R.D,Sternberg A.L,D’Emic C

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Semiconductor Industry Association, NTRS, 2002

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

4. 1/f noise and radiation effects in MOS devices

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