Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories-Reference-Cited by-同舟云学术

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Published:2013-09 Issue: Volume:109 Page:142-147
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Juan P.C.,Sun C.L.,Liu C.H.,Lin C.L.,Mong F.C.,Huang J.H.,Chang H.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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3. Giant Ferroelectric Polarization Beyond 150 µC/cm2in BiFeO3Thin Film

4. J.F. Scott, Ferroelectric Memories, Springer, 2001.

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