X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films-Reference-Cited by-同舟云学术

X-ray metrology for high-k atomic layer deposited HfxZr1−xO2 films

Published:2008-01 Issue:1 Volume:85 Page:49-53
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Gallegos Jesus J.,Triyoso Dina H.,Raymond Mark

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. R.I. Hegde, D.H. Triyoso, P.J. Tobin, S. Kalpat, M.E. Ramon, H.-H. Tseng, J.K. Schaeffer, E. Luckowski, W.J. Taylor, C.C. Capasso, D.C. Gilmer, M. Moosa, A. Haggag, M. Raymond, D. Roan, J. Nguyen, L.B. La, E. Hebert, R. Cotton, X.-D. Wang, S. Zollner, R. Gregory, D. Werho, R.S. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y.H. Chiu, B.E. White, Jr., in: Technical Digest – International Electron Devices Meet, vol. 39, 2005.

2. Impact of Zr addition on properties of atomic layer deposited HfO2

3. High-κ gate dielectrics: Current status and materials properties considerations

4. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide

5. Phonons and lattice dielectric properties of zirconia

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