Investigation of physical and chemical property changes of ultra low-κ SiOCH in aspect of cleaning and chemical repair processes

Author:

Oszinda Thomas,Schaller Matthias,Fischer Daniel,Walsh Christine,Schulz Stefan E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On the relationship between SiF4 plasma species and sample properties in ultra low-k etching processes;AIP Advances;2020-06-01

2. BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node;Solid State Phenomena;2018-08

3. Theoretical investigation of an in situ k-restore process for damaged ultra-low-k materials based on plasma enhanced fragmentation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09

4. Investigation of Argon Plasma Damage on Ultra Low-κ Dielectrics;ECS Journal of Solid State Science and Technology;2014-10-08

5. Electrical Breakdown in Advanced Interconnect Dielectrics;Advanced Interconnects for ULSI Technology;2012-02-17

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