The study of relation between variable retention time and channel implantation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The study of relation between variable retention time and channel implantation

Published:2016-08 Issue: Volume:162 Page:82-84
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Son Younghwan,Kang Myounggon^ORCID

Funder

Ministry of Education

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. A meta-stable leakage phenomenon in DRAM charge storage — variable hold time;Yaney;Tech. Dig. Int. Electron Device Meet.,1987

2. DRAM variable retention time;Restel;Tech. Dig. Int. Electron Device Meet.,1992

3. Quantitative identification for the physical origin of variable retention time: a vacancy-oxygen complex defect model;Ohyu;Tech. Dig. Int. Electron Device Meet.,2006

4. Improvement of data retention time property by reducing vacancy-type point defect in DRAM cell transistor;Okonogi,2005

5. AVERT: an elaborate model for simulating variable retention time in DRAMs;Kim,2015

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP