FEA study on the TSV copper filling influenced by the additives and electroplating process

Author:

Zhao Zifeng,Liu Ziyu,Chen Lin,Sun Qingqing,Liu Hongye,Sun Yabin

Funder

Social Trends Institute

Ministry of Science and Technology of the People's Republic of China

Shanghai Municipality Science and Technology Commission

Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Through Silicon Capacitors (TSC) for noise reduction in Power Distribution Network;Dieng,2015

2. Through silicon capacitor co-integrated with TSVs on silicon interposer;Guiller;Microelectron. Eng.,2014

3. Through Silicon Capacitor co-integrated with TSV as an efficient 3D decoupling capacitor solution for power management on silicon interposer;Guiller,2014

4. Light-weight and privacy-preserving secure cloud auditing scheme for group users via the third party medium;Shen;J. Netw. Comput. Appl.,2017

5. 2.5D and 3D technology challenges and test vehicle demonstrations;Knickerbocker,2012

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