Formation Energetics, Electronic Structure and Ferromagnetic Properties of C-, Si- and Ge-Doped Zinc Blende Cadmium Chalcogenides-Reference-Cited by-同舟云学术

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Formation Energetics, Electronic Structure and Ferromagnetic Properties of C-, Si- and Ge-Doped Zinc Blende Cadmium Chalcogenides

Published:2020-12 Issue: Volume:25 Page:101652
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Elahi Irfan,Alay-e-Abbas Syed Muhammad,Nazir Safdar,Abbas Ghulam,Akbar Waseem,Shaukat Ali,Tahir Muhammad Nawaz

Funder

Higher Education Commission, Pakistan

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference71 articles.

1. Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

2. Highly spin-polarized materials and devices for spintronics∗

3. Electronic structure and ferromagnetism of boron doped bulk and surface CdSe: By generalized gradient approximation and generalized gradient approximation plus modified Becke and Johnson calculations

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2. Electronic and Optical Properties of Mn-Doped HgSe Topological Insulator for Spintronic Devices;ECS Journal of Solid State Science and Technology;2024-01-01

3. Thermodynamics evaluation of half-metallic ferromagnetism in N-doped XTiO3 (X = Ca, Sr, and Ba) systems: DFT calculations;Materials Today Communications;2023-03

4. Stability, spectroscopic, electrochemistry and QTAIM analysis of Cu-Znn−1On clusters for glucose sensing application: A study on theoretical and experimental insights;Heliyon;2022-12

5. Thermodynamic stability and creation of large half-metallic gap in BaZrO3 via non-magnetic elements doping;Journal of Physics and Chemistry of Solids;2022-05

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