Tunable electronic structure and optical properties of GaN monolayer via substituted doping and strain
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference65 articles.
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5. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation;Amano;Rev. Mod. Phys.,2015
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