The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films

Published:2022-08 Issue: Volume:32 Page:104008
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Choi Eunmi,Kim Hayeong,Maeng SeonJeong,Lee Jaebaek,Kim Dae-Hwan,Heo Kyuyoung,Yun Ju-Young

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference28 articles.

1. Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics;Ahadi;RSC Adv.,2016

2. Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2;Lin;Appl. Surf. Sci.,2019

3. High-K materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R Rep.,2015

4. ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors;Putkonen;Chem. Vap. Depos.,2003

5. Comparative study on the use of novel heteroleptic cyclopentadienyl-based zirconium precursors with H2O and O3 for atomic layer deposition of ZrO2;Seppälä;J. Vac. Sci. Technol. A,2019

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Prediction of Vapor Pressure for Diverse Atomic Layer Deposition Precursors;Journal of Chemical Theory and Computation;2024-07-11

2. Towards modeling of ZrO2 atomic layer deposition at reactor scale based on experimental kinetic approximation;Applied Surface Science;2024-02

3. Structure and Thermal Properties of Tris-(methylcyclopentadienyl)Scandium;Journal of Structural Chemistry;2023-12

4. Atomic Layer Deposition of HfO₂ Films Using Tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)₄] for Advanced Gate Dielectrics Applications;ACS Applied Nano Materials;2023-09-15

5. Role of Cyclopentadienyl Ligands of Group 4 Precursors toward High-Temperature Atomic Layer Deposition;The Journal of Physical Chemistry C;2022-10-13

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3