Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs

Author:

Kim Jiseok,Krishnan Siddarth A.,Narayanan Sudarshan,Chudzik Michael P.,Fischetti Massimo V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Reliability limits for the gate insulator in CMOS technology;Stathis;IBM J Res Dev,2002

2. Kang L, Onishi K, Jeon Y, Lee B, Kang C, Qi W et al. MOSFET devices with polysilicon on single-layer HfO2 high-κ dielectrics. In: Electron Dev Meet., 2000. IEDM Technical Digest. International; 2000. p. 35–8.

3. High-κ gate dielectrics: current status and materials properties considerations;Wilk;J Appl Phys,2001

4. Current transport in metal/hafnium oxide/silicon structure;Zhu;IEEE Electron Dev Lett,2002

5. Electrical characteristics of postdeposition annealed HfO2 on silicon;Puthenkovilakam;Appl Phys Lett,2005

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