Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs-Reference-Cited by-同舟云学术

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

Published:2012-12 Issue:12 Volume:52 Page:2875-2879
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jin Donghyun,del Alamo Jesús A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

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3. Reliability issues of GaN based high voltage power devices;Wuerfl;Microelectron Reliab,2011

4. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure;Saito;IEEE Trans Electron Dev,2007

5. 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance;Chu;IEEE Electron Dev Lett,2011

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