Investigation on X-ray irradiation on nanoscale nitride based charge trapping flash memory devices-Reference-Cited by-同舟云学术

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Investigation on X-ray irradiation on nanoscale nitride based charge trapping flash memory devices

Published:2017-12 Issue: Volume:79 Page:59-68
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lee Meng Chuan,Wong Hin Yong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Charge loss mechanisms of nitride based charge trap flash memory devices;Lee;IEEE Trans. Electron Devices,2013

2. Technical solutions to mitigate reliability challenges due to technology scaling of charge storage NVM;Lee;J. Nanomater.,2013

3. Threshold voltage instability mechanisms of nitride based charge trap flash memory — a review;Lee;J. Nanosci. Nanotechnol.,2014

4. Evaluation of X-rays irradiation on 65nm multi-level cell NOR flash technologies;Navuduri,2010

5. Total dose radiation response of NROM-style SOI non-volatile memory elements;Draper;IEEE Trans. Nucl. Sci.,2008

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