Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. 10kV and 15kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems;Pala,2014
2. 21-kV SiC BJTs with space-modulated junction termination extension;Miyake;IEEE Electron Device Letters,2012
3. 4H-SiC BJTs with record current gains of 257 on (0001) and 335 on (000¯1);Miyake;IEEE Electron Device Letters,2011
4. 22 kV SiC emitter turn-off (ETO) thyristor and its dynamic performance including SOA;Song,2015
5. 27 kV, 20 A 4H-SiC n-IGBTs;van Brunt;Mater. Sci. Forum,2015
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献