Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium-Reference-Cited by-同舟云学术

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-κ gate stacks on germanium

Published:2009-01 Issue:1 Volume:49 Page:26-31
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Rahman M.S.,Evangelou E.K.,Androulidakis I.I.,Dimoulas A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Electrical properties of high-κ gate dielectrics: challenges, current issues, and possible solutions;Houssa;Mater Sci Eng Reports,2006

2. Molecular beam deposition of high-κ gate dielectrics for advanced CMOS in the book materials for information technologies;Dimoulas,2005

3. Effects of denuded zone of Si (111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal–oxide–semiconductor devices;Cheng;Appl Phys Lett,2004

4. Dielectric reliability measurement methods: a review;Martin;Microelectron Reliab,1998

5. Electrically active interface and bulk semiconductor defects in high-κ/germanium structures;Dimoulas,2006

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