Author:
Yuan J.-S.,Wang Y.,Steighner J.,Yen H.-D.,Jang S.-L.,Huang G.-W.,Yeh W.-K.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. 35dBm, 35GHz power amplifier MMICs using 6inch GaAs pHEMT commercial technology;Mahon;IEEE Microw Symp, Dig MTT-S,2008
2. A high power density TaN/Au T-gate pHEMT with high humidity resistance for Ka-band applications;Amasuga;IEEE Microw Symp Dig MTT-S,2005
3. Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs pHEMT’s;Borgarino;IEEE Trans Electron Devices,1998
4. The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers;Chou;IEEE Trans Microw Theory Tech,2005
5. Hot-electron-induced degradation in BCB- and SiN-passivated Al0.25Ga0.75As/In0.2Ga0.8As PHEMTs;Tan;IEEE Trans Device Mater Reliab,2007
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献