Recovery and universality in NBTI
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. 1] Grasser T, Kaczer B, Hehenberger P, Gös W, O’Connor R, Reisinger H, Gustin W, Schunder C. Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability. In: International electron devices meeting; 2007. p. 801–4.
2. Huard V. Two independent components modeling for negative bias temperature instability. In: International reliability physics symposium; 2010. p. 33–42.
3. Negative bias temperature instability (NBTI) recovery with bake;Katsetos;Microelectron Reliab,2008
4. On the distribution of NBTI time constants on a long, temperature-accelerated time scale;Pobegen;IEEE Trans Electron Dev,2013
5. Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems;Fujieda;Appl Phys Lett,2003
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