Author:
Chiu Hsien-Chin,Wu Chia-Hsuan,Chi Ji-Fan,Chyi J.-I.,Lee G.-Y.
Funder
Ministry of Science and Technology, ROC
High Speed Intelligent Communication (HSIC) Research Center, Healthy Aging Research Center (HARC) in Chang Gung University
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices;Chow;IEEE Trans Electron Dev,1994
2. Device characteristics of AlGaN/GaN MOS-HEMTs using high-k praseodymium oxide layer;Chiu;IEEE Trans Electron Dev,2008
3. Medjdoub F, Carlin J.-F., Gonschorek M, Feltin E, Py M.A., Ducatteau D, Gaquiere C, Grandjean N, Kohn E. Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?. IEDM Tech Dig, Dec. 11–13; 2006: p. 1–4.
4. Two dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03⩽x⩽0.23);Gonschorek;J Appl Phys,2008
5. High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures;Gonschorek;Appl. Phys. Lett.,2006
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