Long-term reliability of Ti–Pt–Au metallization system for Schottky contact and first-level metallization on SiC MESFET-Reference-Cited by-同舟云学术

Long-term reliability of Ti–Pt–Au metallization system for Schottky contact and first-level metallization on SiC MESFET

Published:2004-07 Issue:7 Volume:44 Page:1109-1113
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sozza A,Dua C,Kerlain A,Brylinski C,Zanoni E

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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2. Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H–SiC;Kassamakova;Semicons. Sci. Techno.,1998

3. Thin-film interdiffusion. I. Au–Pd, Pd–Au, Ti–Pd, Ti–Au, Ti–Pd–Au, and Ti–Au–Pd;Poate;J. Appl. Phys.,1975

4. Characterization of power MESFETs on 4H–SiC conductive and semi-insulating wafers;Noblanc;Mater. Sci. Forum,1998

5. Sze SM. VLSI Technology. New York, USA; 1988. p. 280–326 [Chapter 7]

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