1. A 4.6 GHz 162 Mb SRAM design in 22 nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry;Karl,2012
2. A 64 Mb SRAM in 22 nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction;Pilo,2013
3. A 0.6 V 1.5 GHz 84 Mb SRAM design in 14 nm FinFET CMOS technology;Karl,2015
4. A 7 nm 256 Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications;Chang,2017
5. A 23.6 Mb/mm2 SRAM in 10 nm FinFET technology with pulsed PMOS TVC and stepped-WL for low-voltage applications;Guo,2018