Thermal stability of SiC Schottky diode anode and cathode metalisations after 1000h at 350°C-Reference-Cited by-同舟云学术

Thermal stability of SiC Schottky diode anode and cathode metalisations after 1000h at 350°C

Published:2011-05 Issue:5 Volume:51 Page:904-908
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

O’Mahony Donagh,Duane Russell,Campagno Tony,Lewis Liam,Cordero Nicolas,Maaskant Pleun,Waldron Finbarr,Corbett Brian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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2. Prospects for SiC electronics and sensors;Wright;Mater Today,2008

3. Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs;Zhang;Phys Status Solidi A-Appl Mater Sci,2009

4. Reliability and performance limitations in SiC power devices;Singh;Microelectron Reliab,2006

5. Recent progress and current issues in SiC semiconductor devices for power applications;Johnson;IEEE Proc-Circ Dev Syst,2001

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4. A current–voltage–temperature method for fast extraction of schottky diode static parameters;Measurement;2014-03

5. High-Temperature Die-Attach Technology for Power Devices Based on Thermocompression Bonding of Thin Ag Films;IEEE Transactions on Components, Packaging and Manufacturing Technology;2013-04