Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs-Reference-Cited by-同舟云学术

Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs

Published:2011-02 Issue:2 Volume:51 Page:342-349
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Álvarez-Botero Germán,Torres-Torres Reydezel,Murphy-Arteaga Roberto

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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4. First-order parameter extraction on enhancement silicon MOS transistors;Hamer;IEE Proc Solid-State Electron Dev,1986

5. D. Fleury, A. Cros, H. Brut, G. Ghibaudo, New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs. In: IEEE proccedings of international conference on microelectronic test structures, Edinburgh: IEEE; 2008. p. 160–5.

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