A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations-Reference-Cited by-同舟云学术

A theoretical model for calculating the effects of carrier heating with nonequilibrium hot phonons on semiconductor devices and the current-voltage relations

Published:2018-12 Issue: Volume:91 Page:335-343
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tsai Chin-Yi^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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2. Hot-Carrier Reliability of MOS VLSI Circuits;Leblebici,1993

3. The Monte Carlo Method for Semiconductor Device Simulation;Jacoboni,1989

4. Monte Carlo Simulation of Semiconductor Devices;Moglestue,1993

5. Nonlinear gain coefficients in semiconductor quantum well lasers: effects of carrier diffusion, capture, and escape;Tsai;IEEE J. Sel. Top. Quantum Electron.,1995

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