Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects-Reference-Cited by-同舟云学术

Correction factors to strength of thin silicon die in three- and four-point bending tests due to nonlinear effects

Published:2022-01 Issue: Volume:128 Page:114424
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Tsai M.Y.,Huang P.S.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Ultra-thin Chip Technology and Applications;Burghartz,2011

2. Thin silicon wafer processing and strength characterization;Gambino,2013

3. Test Method for Measurement of Die Strength by Mean of 3-Point Bending,2003

4. Standard Test Methods for Flexural Properties of Ceramic Whiteware Materials,2013

5. Standard Test Methods for Flexural Properties of Unreinforced and Reinforced Plastics and Electrical Insulating Materials,2003

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