Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains-Reference-Cited by-同舟云学术

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Sub-10 MeV proton-induced single-event transients in 65 nm CMOS inverter chains

Published:2021-10 Issue: Volume:125 Page:114366
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wu Zhenyu,Chi Yaqing,Chen Jianjun,Huang Pengcheng,Liang Bin,Zhang Xiaodong

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology[J];Zhang;Microelectron. Reliab.,2018

2. Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics[J];King;Appl. Phys. Lett.,2012

3. Single event transients in digital CMOS—a review[J];Ferlet-Cavrois;IEEE Trans. Nucl. Sci.,2013

4. Basic mechanisms and modeling of single-event upset in digital microelectronics[J];Dodd;IEEE Trans. Nucl. Sci.,2003

5. Heavy ion and high energy proton-induced single event transients in 90 nm inverter, NAND and NOR gates[J];Cannon;IEEE Trans. Nucl. Sci.,2009

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