Author:
Wang Yue,Wang Lixin,Guo Min,Chen Runze,Wang Shixin,Jiang Yongchao
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Numerical and experimental investigation of TID radiation effects on the breakdown voltage of 400-V SOI NLDMOSFETs;Shu;IEEE Trans. Nucl. Sci.,2019
2. Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters;Shen;IEEE Trans. Power Electron.,2006
3. Development of a radiation-hardened lateral power MOSFET for POL applications;Dodd;IEEE Trans. Nucl. Sci.,2009
4. Ionizing Radiation Effects in MOS Devices And Circuits;Ma,1989
5. Radiation studies of power LDMOS devices for high energy physics applications;Diez;IEEE Trans. Nucl. Sci.,2010
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