Reliability evaluation of thick Ag wire bonding on Ni pad for power devices-Reference-Cited by-同舟云学术

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Reliability evaluation of thick Ag wire bonding on Ni pad for power devices

Published:2024-01 Issue: Volume:152 Page:115304
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Wei Xing,Xin Di,Morisako Isamu,Takahashi Junko,Tatsumi Kohei

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. 10 things to know about silicon carbide (SiC), Power Electron;Lovati;News,2021

2. G. Harman, “Wire Bonding in Microelectronics”, pp. 282.

3. Behavior of aluminum oxide, intermetallics and voids in Cu–Al wire bonds;Xu;Acta Mater.,2011

4. K. Toyozawa, K. Fujita, S. Minamide, and T. Maeda, “Development of copper wire bonding application technology”, in Electronic Components and Technology Conference, 1990. 40th, 1990, pp. 762–767, vol. 1.

5. Semiconductor Package Having Oxidation-free Copper Wire;Lee,2003

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