1. Novel enhanced-planar IGBT technology rated up to 6.5kV for lower losses and higher SOA capability;Rahimo,2006
2. Investigations on 6.5kV trench IGBT and adapted EmCon diode;Bauer,2007
3. The next generation of HV-IGBTs with low loss and high SOA capability;Nakamura,2008
4. Impact of an LPT(II) concept with thin wafer process technology for IGBT’s vertical structure;Nakamura,2009
5. Wide cell pitch LPT(II)-CSTBTTM(III) technology rating up to 6500 V for low loss;Nakamura,2010