Finite element modeling on electromigration of solder joints in wafer level packages-Reference-Cited by-同舟云学术

Finite element modeling on electromigration of solder joints in wafer level packages

Published:2010-04 Issue:4 Volume:50 Page:547-555
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Dandu P.,Fan X.J.,Liu Y.,Diao C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Electromigration in ULSI interconnects;Tan;Mater Sci Eng,2007

2. Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints;Zhang;Appl Phys Lett,2006

3. Choi WJ, Yeh ECC, Tu KN. Electromigration of flip chip solder joints on Cu/Ni(V)/AI thin film under bump metallization. In: Electronic components and technology conference, May 28–31, San Diego, CA, 2002.

4. Electromigration failure mechanisms in P1264 SnPb and P1266 SnAg solder joints;Liu;Intel Assembly Test Technol J,2006

5. Fan XJ, Varia B, Han Q. Design and optimization of thermo-mechanical reliability in wafer level packaging. Microelectron Reliab, this issue.

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