Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Author:

Kaczer B.,Degraeve R.,Roussel Ph.,Groeseneken G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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4. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon;DiMaria;J Appl Phys,1993

5. Explanation of stress-induced damage in thin oxides;Bude;IEDM Technol Dig,1998

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