The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors-Reference-Cited by-同舟云学术

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The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors

Published:2015-05 Issue:6 Volume:55 Page:890-893
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chiu Hsien-Chin,Lin Wen-Yu,Hsueh W.J.,Chiu Pei-Chin,Hsin Yue-Ming,Chyi Jen-Inn

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. A W-Band InAs/AlSb low-noise/low-power amplifier;Deal;IEEE Microw Wirel Compon Lett,2005

2. AlSb/InAs HEMTs for low-voltage high-speed applications;Boos;IEEE Trans Electron Dev,1998

3. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier;Hacker;IEEE Microw Wirel Compon Lett,2004

4. Antimonide-based compound semiconductors for electronic devices: a review;Bennett;Solid-State Electron,2005

5. Gardes C, Bagumako SM, Desplanque L, et al. 120nm AlSb/InAs HEMT without gate recess: 290GHzft and 335GHz fmax. In: Proceedings of the international conference on indium phosphide and related materials; 2013. p. 1–2.

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