Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications-Reference-Cited by-同舟云学术

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Published:2012-01 Issue:1 Volume:52 Page:141-146
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Herth E.,Desré H.,Algré E.,Legrand C.,Lasri T.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module;Mao;J Opt Exp,2008

4. Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics of optical waveguides;Ay;J Opt Mater,2004

5. Fabrication of silicon nitride waveguides for visible-light using PEVCD: a study of the effect of plasma frequency on optical properties;Gorin;J Opt Exp,2008

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