Total ionizing dose effects in elementary devices for 180-nm flash technologies-Reference-Cited by-同舟云学术

Total ionizing dose effects in elementary devices for 180-nm flash technologies

Published:2011-08 Issue:8 Volume:51 Page:1295-1301
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hu Zhiyuan,Liu Zhangli,Shao Hua,Zhang Zhengxuan,Ning Bingxu,Chen Ming,Bi Dawei,Zou Shichang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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3. Nguyen DN, Lee CI, Johnston AH. Total ionizing dose effects on flash memories. In IEEE radiation effects data workshop; 1998. p. 100–3.

4. Radiation effects on advanced flash memories;Nguyen;IEEE Trans Nucl Sci,1999

5. Nguyen DN, Scheick LF. TID, SEE and radiation induced failures in advanced flash memories. In IEEE radiation effects data workshop; 2003. p. 18–23.

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