Author:
Nelhiebel M.,Illing R.,Schreiber C.,Wöhlert S.,Lanzerstorfer S.,Ladurner M.,Kadow C.,Decker S.,Dibra D.,Unterwalcher H.,Rogalli M.,Robl W.,Herzig T.,Poschgan M.,Inselsbacher M.,Glavanovics M.,Fraissé S.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Fabrication of trench isolation and trench power MOSFETs in a smart power IC technology with a single trench unit process;Kadow;Proc ISPSD,2009
2. Measurement and simulation of self-heating in DMOS transistors up to very high temperatures;Pfost;Proc ISPSD,2008
3. Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions;Detzel;Microelectron Rel,2004
4. Fast thermal fatigue on top metal layer of power devices;Russo;Microelectron Rel,2002
5. Reliability of power transistors against application driven temperature swings;Gopalan;Microelectron Rel,2002
Cited by
25 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献