Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots-Reference-Cited by-同舟云学术

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Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

Published:2013-04 Issue: Volume:555 Page:250-254
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lu Cheng-Hsueh,Li Yi-Chang,Chen Yen-Hsiang,Tsai Sheng-Chieh,Lai Yen-Lin,Li Yun-Li,Liu Chuan-Pu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference30 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. The Blue Laser Diode: GaN Based Light Emitting and Lasers;Nakamura,1997

3. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

4. The role of threading dislocations in the physical properties of GaN and its alloys

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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1. Graphene-assisted remote epitaxy wrinkle-free GaN films on flexible mica;Journal of Alloys and Compounds;2024-11

2. Improve characteristics of GaN-based green mini-LEDs with double dielectric sidewall passivation;Physica Scripta;2023-10-18

3. Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells;Micro and Nanostructures;2023-05

4. Luminescence measurement of band gap;Acta Physica Sinica;2022

5. Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates;Photonics Research;2021-12-09

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