Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer-Reference-Cited by-同舟云学术

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Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer

Published:2020-05 Issue: Volume:823 Page:153775
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Reddy V. Rajagopal,Choi Chel-Jong^ORCID

Funder

University Grants Commission (UGC), New Delhi, India

National Research Foundation of Korea

Ministry of Education, Republic of Korea

Technology Innovation Program

Ministry of Trade, Industry & Energy, Republic of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference41 articles.

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2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C;Khan;Appl. Phys. Lett.,1995

3. GaN electronics for high power, high temperature applications;Pearton;Mater. Sci. Eng. B,2001

4. New optimized dual-material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime;Lakhdar;Microelectron. Reliab.,2012

5. High-quality interface in MIS structures with in situ pre-gate plasma nitridation;Yang;IEEE Electron. Device Lett.,2013

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