Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference13 articles.
1. GaN/Mirror/Si Light-Emitting Diodes for Vertical Current Injection by Laser Lift-Off and Wafer Bonding Techniques
2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
3. Mechanism Underlying Damage Induced in Gallium Nitride Epilayer during Laser Lift-Off Process
4. Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures
5. Nonalloyed Cr∕Au-based Ohmic contacts to n-GaN
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1. Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer;IEEE Transactions on Electron Devices;2023-04
2. First-principles investigation of the effect of noble metals on the electronic and optical properties of GaN nitride;Materials Science in Semiconductor Processing;2022-11
3. HVPE growth of bulk GaN with high conductivity for vertical devices;Semiconductor Science and Technology;2020-12-03
4. Insight into the Al/N-GaN barrier property to realize high quality n-type Ohmic contact;Journal of Alloys and Compounds;2020-03
5. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes;Superlattices and Microstructures;2017-11
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