Crystal structure of the phases Hg5CIII2X8 (CIII=Ga, In; X=Se, Te)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference14 articles.
1. Growth and some properties of Zn5In2S8 single crystal
2. Effusion reactions in the ZnSe–ZnIn2Se4 system
3. Phase equilibria in the quasi-ternary system Ag2S–CdS–Ga2S3
4. The phase diagram of the quasibinary system Hg3Se3/Ga2Se3
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1. Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3In2Te6 single crystals by TEM observation and crystallographic calculation;Journal of Alloys and Compounds;2015-02
2. On the morphology and crystallography of Hg5In2Te8 precipitation in Hg3In2Te6;Journal of Alloys and Compounds;2014-07
3. TEM study on HgIn2Te4 precipitates in Hg3In2Te6 crystals grown by the Bridgman method;CrystEngComm;2014
4. Optoelectronic features of novel infrared CuInS2–ZnIn2S4 crystalline alloys;Journal of Materials Science: Materials in Electronics;2013-11-07
5. Systems Based on HgSe;Ternary Alloys Based on II-VI Semiconductor Compounds;2013-07-11
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