Resistive switching characteristics of graphene/NiO/highly ordered pyrolytic graphite resistive random access memory capacitors
Author:
Funder
National Research Foundation of Korea
Korea government
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference20 articles.
1. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007
2. Direct observation of conducting filaments on resistive switching of NiO thin films;Son;Appl. Phys. Lett.,2008
3. NiO resistive random access memory nanocapacitor array on graphene;Son;ACS Nano,2010
4. Nanofilamentary resistive switching in binary oxide system; A review on the present status and outlook;Kim;Nanotechnology,2011
5. SrTiO3-Based resistive switching memory device with graphene nanoribbon electrodes;Kim;J. Am. Ceram. Soc.,2016
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