Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing-Reference-Cited by-同舟云学术

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Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing

Published:2018-04 Issue: Volume:743 Page:262-267
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Hsu Chung-Chun,Lin Kun-Lin,Chi Wei-Chun,Chou Chen-Han,Luo Guang-Li,Lee Yao-Jen,Chien Chao-Hsin

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference28 articles.

1. Ohmic contact formation on n-type Ge;Lieten;Appl. Phys. Lett.,2008

2. Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation;Sasada;J. Appl. Phys.,2009

3. Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation;Matsubara;Appl. Phys. Lett.,2008

4. Ohmic contacts to n-type germanium with low specific contact resistivity;Gallacher;Appl. Phys. Lett.,2012

5. High performance 60 nm gate length germanium p-MOSFETs with Ni germanide metal source/drain;Yamamoto,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Collective spin behavior of NiGe thin films on MgO substrate;Journal of Magnetism and Magnetic Materials;2021-06

2. Ti Interlayer Mediated Uniform NiGe Formation under Low-Temperature Microwave Annealing;Metals;2021-03-15

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