Enhanced optoelectronic properties of solution-processed metal-chalcogenide devices via hydrogen-driven post-annealing-Reference-Cited by-同舟云学术

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Enhanced optoelectronic properties of solution-processed metal-chalcogenide devices via hydrogen-driven post-annealing

Published:2022-12 Issue: Volume:926 Page:166780
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Nam Seung-Ji,Kwak Jee Young,Kwon Sung Min,Kang Dong Won,Lee Jong-Min,Lee Paul,Kim Myung-Gil,Kim Yong-Hoon,Kim Jaehyun,Park Sung Kyu

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Chung-Ang University

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference39 articles.

1. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor, Hideo Hosono Source: Science, New Series, Vol. 300, No. 5623, 2010, pp. 1269–1272.

2. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films;Kim;Nature,2012

3. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

4. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric;Nayak;Appl. Phys. Lett.,2013

5. Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor;Choi;J. Mater. Chem. C,2015

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