Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy

Published:2011-10 Issue:40 Volume:509 Page:9565-9571
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Krawczyk Mirosław,Lisowski Wojciech,Sobczak Janusz W.,Kosiński Andrzej,Jablonski Aleksander,Skierbiszewski Czesław,Siekacz Marcin,Wiązkowska Sylwia

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference44 articles.

1. Design and characterization of GaN∕InGaN solar cells

2. Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

3. Materials Research Society Symposium Proceedings 449;Piner,1997

4. Indium droplet formation during molecular beam epitaxy of InGaN

5. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

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1. Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application;Journal of Electrical Engineering & Technology;2021-11-17

2. Soft X-ray photoelectron spectroscopy of the ultrathin Ba/InGaN interface;Applied Surface Science;2017-11

3. Effects of N/Ga flux ratio on GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy;Journal of Alloys and Compounds;2017-07

4. Surface characterization of graphene based materials;Applied Surface Science;2016-12

5. Composition measurement of epitaxial ScxGa1−xN films;Semiconductor Science and Technology;2016-05-19

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