Effect of ion irradiation on current–voltage characteristics of Au/n-GaN Schottky diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference17 articles.
1. Schottky barrier rectifier with high current density using vanadium as barrier metal
2. Electrical properties of metal contacts on laser-irradiated n-type GaN
3. Neutron irradiation effects on visible-blind Au/GaN Schottky barrier detectors grown on Si(111)
4. Barrier height modification of Au/n-Si Schottky structures by swift heavy ion irradiation
5. In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs Schottky diode at low temperature
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1. Impact of swift heavy oxygen ion irradiation on the performance of Pt/GaN Schottky diodes and epitaxial layers: A comparative study;Journal of Applied Physics;2023-10-27
2. In situ IV and CV characterization of Pt/n-GaN Schottky barrier diodes irradiated by 100 MeV oxygen ions;Journal of Materials Science: Materials in Electronics;2023-09
3. The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements;Journal of Materials Science: Materials in Electronics;2023-03
4. Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts;Semiconductor Science and Technology;2022-08-19
5. The In Situ Ion Irradiation Toolbox: Time-Resolved Structure and Property Measurements;JOM;2021-11-24
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