Effects of film thickness on microstructure and properties of Bi3.15Nd0.85Ti3O12 thin films fabricated by chemical solution deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference21 articles.
1. Ferroelectric Memories
2. Dynamics of ferroelastic domains in ferroelectric thin films
3. Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film
4. Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition
5. Simulation of thickness effect in thin ferroelectric films using Landau–Khalatnikov theory
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method;Journal of Materials Science: Materials in Electronics;2019-02-20
2. Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method;Advanced Materials Research;2012-04
3. Polarization effect on the photocurrent of Pt sandwiched multi-crystalline ferroelectric films;Materials Chemistry and Physics;2011-10
4. Effects of Film Thickness on Microstructure and Ferroelectric Properties of Bi3.15Nd0.85Ti3O12 Thin Films Prepared by Sol-Gel Method;Advanced Materials Research;2011-05
5. Leakage current characteristics of Bi3.15Nd0.85Ti3−xZrxO12 thin films;Materials Letters;2010-12
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