Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference34 articles.
1. First-principles calculations of electronic and optical properties of Ti-doped monoclinic HfO2
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4. Review and Perspective of Hf-based High-kGate Dielectrics on Silicon
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1. Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1−x)2O3 for x = 0.25–0.74;ECS Journal of Solid State Science and Technology;2020-01-05
2. Interfacial and electrical properties of nanolaminated HfO2/Al2O3 dielectrics on GaN with an AlN interlayer;Semiconductor Science and Technology;2019-11-29
3. Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65;ECS Journal of Solid State Science and Technology;2019
4. A study of the effects of aligned vertically growth time on ZnO nanorods deposited for the first time on Teflon substrate;Applied Surface Science;2017-12
5. Thermal stability, structural and electrical characteristics of the modulated HfO2/Al2O3 films fabricated by atomic layer deposition;Journal of Materials Science;2017-06-19
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