Chemical etching and annealing induced GaAs(100) surface properties
Author:
Publisher
Elsevier BV
Subject
General Engineering
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1. Monte Carlo model for the deposition of electronic energy in solid argon thin films by keV electrons;Journal of Applied Physics;1996-11-15
2. Dependence of silicon surface electronic parameters on surface Fermi level position;Vacuum;1994-02
3. Adsorption/desorption kinetics of H2O on GaAs(100) measured by photoreflectance;The Journal of Chemical Physics;1993-11
4. Analysis of Charge Versus the Surface Fermi Level Position at Silicon Surface;Acta Physica Polonica A;1992-02
5. Information depth of Auger electron and appearance potential spectroscopies: a Monte Carlo study;Surface Science;1990-06
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