Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis-Reference-Cited by-同舟云学术

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Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis

Published:2023-10 Issue:5 Volume:11 Page:111080
ISSN:2213-3437
Container-title:Journal of Environmental Chemical Engineering
language:en
Short-container-title:Journal of Environmental Chemical Engineering

Author:

Chen Gaopan,Pan Liyan,Luo Haimei,Zhou Yan,Luo Guihai,Pan Guoshun

Publisher

Elsevier BV

Subject

Process Chemistry and Technology,Pollution,Waste Management and Disposal,Chemical Engineering (miscellaneous)

Reference51 articles.

1. Material removal rate of double-faced mechanical polishing of 4H-SiC substrate;Zhang;Int. J. Adv. Manuf. Technol.,2022

2. Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H-SiC wafers;Yang;Ceram. Int.,2022

3. Fixed abrasive grinding of CVD SiC mirrors;Bifano;Precis. Eng.,1994

4. Wheel wear behavior and its influence on grinding performance in electrical discharge diamond grinding of reaction-bonded silicon carbide;Rao;J. Manuf. Process,2023

5. Changes in surface layer of silicon wafers from diamond scratching;Zhang;CIRP Ann. Manuf. Technol.,2015

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2. Preparation and characterization of highly catalytic and corrosion resistant Fe–Ti–O magnetorheological composite powders;Journal of Materials Research and Technology;2024-09

3. The influence of the types of cluster composite abrasives on the performance of fixed abrasive pads in processing quartz glass;Materials Today Communications;2024-06

4. Mechanism of solid-state diffusion reaction in vacuum between metal (Fe, Ni, and Co) and 4H–SiC;Ceramics International;2024-05

5. Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron;Tribology International;2024-05

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