Electromigration testing of integrated circuit interconnections-Reference-Cited by-同舟云学术

Electromigration testing of integrated circuit interconnections

Published:1998-11 Issue:3-4 Volume:40 Page:207-221
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fantini F.,Lloyd J.R.,De Munari I.,Scorzoni A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Proc. IEEE International Reliability Physics Symposium;Black,1967

2. MIL-I-38538, Appendix A. paragraph 30.5.5, Internal conductors.

3. Stress generation by electromigration

4. Standard Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration, F 1259-89, Annual Book of ASTM Standards, Vol. 10.04.

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