Challenges, developments and applications of silicon deep reactive ion etching-Reference-Cited by-同舟云学术

Challenges, developments and applications of silicon deep reactive ion etching

Published:2003-06 Issue: Volume:67-68 Page:349-355
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Laermer F.,Urban A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. F. Laermer, A. Schilp, German Pat., DE 4 241 045 granted on 26 May 1994 (US Pat. 5 501 893 granted on 26 March 1996).

2. Technical Digest of Transducers‘95;Offenberg,1995

3. Technical Digest of Transducers‘97;Lutz,1997

4. Late News Contributions;Funk,1995

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